Anomalous activation of shallow B implants in Ge

نویسندگان

  • B. R. Yates
  • B. L. Darby
  • R. Lin
  • P. F. Nielsen
چکیده

a Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, United States b Department of Microand Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345B, DK-2800 Kgs. Lyngby, Denmark c Center for Individual Nanoparticle Functionality, CINF, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark d CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby, Denmark e Varian Semiconductor Equipment Associates, Gloucester, MA 01930, United States

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Activation and thermal stability of ultra-shallow B+-implants in Ge

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تاریخ انتشار 2011